View STP40N65M2_9044010.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

february 2015 docid027478 rev 1 1 / 14 this is information on a product in full production. www.st.com sti40n65m2, STP40N65M2 n - channel 650 v, 0.087 typ., 32 a mdmesh? m2 power mosfet in i2pak and to - 220 packages datasheet - production data figure 1 : internal schematic diagram features order code v ds r ds(on) max. i d sti40n65m2 650 v 0.099 32 a STP40N65M2 ? extremely low gate charge ? excellent output capacitance (c oss ) profile ? 100% avalanche tested ? zener - protected applications ? switching applications description these devices are n - channel power mosfets dev eloped using mdmesh? m2 technology. thanks to their strip layout and improved vertical structure, the devices exhibit low on - resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. table 1: device summary order code marking package packaging sti40n65m2 40n65m2 i2pak tube STP40N65M2 to -220 1 2 3 1 2 3 t o-220 i2 p ak tab tab am15572v1_tab d(2, t ab) g(1) s(3)
contents sti40n65m2, STP40N65M2 2 / 14 docid027478 rev 1 contents 1 electrical ratings ............................................................................. 3 2 electrical characteristics ................................................................ 4 2.2 electrical characteri stics (curves) ...................................................... 6 3 test circuits ..................................................................................... 8 4 package information ....................................................................... 9 4.1 i2pak package information ............................................................... 9 4.2 to - 220 type a packa ge information ................................................ 11 5 revision history ............................................................................ 13
sti40n65m2, STP40N65M2 electrical ratings docid027478 rev 1 3 / 14 1 electrical ratings table 2: absolute maximum ratings symbol parameter value unit v gs gate - source voltage 25 v i d drain current (continuous) at t c = 25 c 32 a i d drain current (continuous) at t c = 100 c 20 a i dm (1) drain current (pulsed) 128 a p tot total dissipation at t c = 25 c 250 w dv/dt (2) peak diode recovery voltage slope 15 v/ns dv/dt (3) mosfet dv/dt ruggedness 50 v/ns t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 notes: (1) pulse width limited by safe operating area. (2) i sd 32 a, di/dt 400 a/s; v ds peak < v (br)dss , v dd = 400 v (3) v ds 520 v table 3: thermal data symbol parameter value unit r thj - case thermal resistance junction - case max 0.5 c/w r thj - amb thermal resistance junction - ambient max 62.50 c/w table 4: avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not repetitive (pulse width limited by t jmax ) 3 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 820 mj
electrical characteri stics sti40n65m2, STP40N65M2 4 / 14 docid027478 rev 1 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5: on/off states symbol parameter test conditions min . typ. max. unit v (br)dss drain - source breakdown voltage v gs = 0 v, i d = 1 ma 650 v i dss zero gate voltage drain current v gs = 0 v, v ds = 650 v 1 a v gs = 0 v, v ds = 650 v, t c = 125 c 100 a i gss gate - body leakage current v ds = 0 v, v gs = 25 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain - source on- resistance v gs = 10 v, i d = 16 a 0.087 0.099 table 6: dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 100 v, f = 1 mhz, v gs = 0 v - 2355 - pf c oss output capacitance - 102 - pf c rss reverse transfer capacitance - 2.7 - pf c oss eq. (1) equivalent output capacitance v ds = 0 v to 5 20 v, v gs = 0 v - 380 - pf r g intrinsic gate resistance f = 1 mhz, open drain - 4.5 - q g total gate charge v dd = 520 v, i d = 32 a, v gs = 10 v (see figure 15: "gate charge test circuit" ) - 56.5 - nc q gs gate - source charge - 8 - nc q gd gate - drain charge - 24 - nc notes: (1) c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss table 7: switching times symbol parameter test conditions min. typ. max. unit t d(on) turn - on delay time v dd = 325 v, i d = 16 a r g = 4.7 , v gs = 10 v (see figure 14: "switching times test circuit for resistive load" and figure 19: "switching time waveform" ) - 15 - ns t r rise time - 10 - ns t d(off) turn - off- delay time - 96.5 - ns t f fall time - 12 - ns
sti40n65m2, STP40N65M2 electrical characteristics docid027478 rev 1 5 / 14 table 8: source drain diode symbol parameter test conditions min. typ. max. unit i sd source - drain current - 32 a i sdm (1) source - drain current (pulsed) - 128 a v sd (2) forward on voltage v gs = 0 v, i sd = 32 a - 1.6 v t rr reverse recovery time i sd = 32 a, di/dt = 100 a/s, v dd = 60 v (see figure 16: " test circuit for inductive load switching and diode recovery times" ) - 468 ns q rr reverse recovery charge - 8.7 c i rrm reverse recovery current - 37.5 a t rr reverse recovery time i sd = 32 a, di/dt = 100 a/s, v dd = 60 v, t j = 150 c (see figure 16: " test circuit for inductive load switching and diode recovery times" ) - 610 ns q rr reverse recovery charge - 11.7 c i rrm reverse recovery current - 39 a notes: (1) pulse width is limited by safe operating area (2) pulse test: pulse duration = 300 s, duty cycle 1.5%
electrical characteristics sti40n65m2, STP40N65M2 6 / 14 docid027478 rev 1 2.2 electrical characteristics (curves) figure 2 : safe operating area figure 3 : thermal impedance figure 4 : output characteristics figure 5 : transfer characteristics figure 6 : normalized gate threshold voltage vs temperature figure 7 : normalized v(br)dss vs temperature i d 10 1 0.1 0.1 1 100 10 (a) 100s 1ms 10ms 100 10s operation in this area is limited by max r ds(on) v ds (v) t j = 150 c t c = 25 c single pulse gipg090220151652als k t p ? z th = k*r thj-c = t p / ? single pulse 0.01 =0.5 10 -1 10 -2 10 -4 10 -5 10 -3 10 -2 10 -1 t p (s) 0.2 0.1 0.05 0.02 gc20540 ds gipg300120151500als v gs = 6,7,8,9,10 v v 70 60 50 40 30 20 10 0 0 4 8 12 16 20 24 i d (a) v (v) gs = 5 v v gs = 4 v gipg300120151715als 0 2 4 6 8 70 60 50 40 30 20 10 0 i d (a) v gs (v) v gs = 20 v
sti40n65m2, STP40N65M2 electrical characteristics docid027478 rev 1 7 / 14 figure 8 : static drain - source on - resistance figure 9 : normalized on - resistance vs. temperature figure 10 : gate charge vs. gate - source voltage figure 11 : capacitance variations figure 12 : output capacitance stored energy figure 13 : source - drain diode forward characteristics
test circuits sti40n65m2, STP40N65M2 8 / 14 docid027478 rev 1 3 test circuits figure 14 : switching times test circuit for resistive load figure 15 : gate charge test circuit figure 16 : test circuit for inductive load switching and diode recovery times figure 17 : unclamped inductive load test circuit figure 18 : unclamped inductive waveform figure 19 : swit ching time waveform am01469v1 v dd 47 k 1 k 47 k 2.7 k 1 k 12 v v i v gs 2200 f p w i g = const 100 100 nf d.u.t. v g am01470v1 a d d.u. t . s b g 25 a a b b r g g f ast diode d s l=100 h f 3.3 1000 f v dd d.u. t . v (b r )d s s v dd v dd v d i dm i d am01472v1 am01473v1 0 v gs 90% v ds t on 90% 10% 90% 10% t d(on) t r t t d(off) t f 10% 0 off
sti40n65m2, STP40N65M2 package information docid027478 rev 1 9 / 14 4 package i nformation in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. 4.1 i2pak package information figure 20 : i2pak package outline 0004982_rev_h
package information sti40n65m2, STP40N65M2 10 / 14 docid027478 rev 1 table 9: i2pak mechanical data dim. mm min. typ. max. a 4.40 ? 4.60 a1 2.40 ? 2.72 b 0.61 ? 0.88 b1 1.14 ? 1.70 c 0.49 ? 0.70 c2 1.23 ? 1.32 d 8.95 ? 9.35 e 2.40 ? 2.70 e1 4.95 ? 5.15 e 10 ? 10.40 l 13 ? 14 l1 3.50 ? 3.93 l2 1.27 ? 1.40
sti40n65m2, STP40N65M2 package information docid027478 rev 1 11 / 14 4.2 to - 220 type a package information figure 21 : to - 220 type a package outline
package information sti40n65m2, STP40N65M2 12 / 14 docid027478 rev 1 table 10: to - 220 type a mechanical data dim. mm min. typ. max. a 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e 2.40 2.70 e1 4.95 5.15 f 1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l 13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ?p 3.75 3.85 q 2.65 2.95
sti40n65m2, STP40N65M2 revision history docid027478 rev 1 13 / 14 5 revision history table 11: document revision history date revision changes 09- feb - 2014 1 first release.
sti40n65m2, STP40N65M2 1 4 / 14 docid027478 rev 1 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications , and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant information on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of or der acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and s t assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information se t forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2015 stmicroelectronics ? all rights reserved

▲Up To Search▲

Price & Availability of STP40N65M2

	To Download STP40N65M2 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .